Mono- and Multi-crystalline wafer and brick lifetime measurement device for routine quality control, sophisticated material research and development
Si | compound semiconductors | oxides | wide bandgap materials | perovskites | epitaxial layers
[CdTe | InP | ZnS | SiC | GaAs | GaN | Ge]
Contactless and destruction free lifetime imaging (μPCD/MDP (QSS)), photoconductivity, resistivity and p/n check according to semi standard SEMI PV9-1110
Wafer cutting, Furnace monitoring, Material optimization and more
Best throughput: >240 bricks/day or >720 wafers/dayMeasurement speed: <4 minutes for a 156 x 156 x 400 mm standard brickYield improvement: 1 mm cutting criteria for a 156 x 156 x 400 mm standard brickQuality control: designed for quality monitoring of processes and materials like mono or multi-crystalline siliconContamination determination: metal (Fe) contaminations originated in crucibles and equipmentReliability: modular and rugged industrial instrument for higher reliability and uptime > 99%Repeatability: > 99%Resistivity: resistivity mapping without frequent calibration
Few examples for research applications,
Iron concentration determination
Trap concentration determination
Boron oxygen determination
Injection dependent measurements and more
completely contactless destruction free electrical semiconductor characterization
special “underneath the surface” lifetime measurement technique
advanced sensitivity for visualization of so far invisible defects
automated cut criteria definition
spatial resolved p/n conduction type transformation detection
Spot size variation
Resistivity measurement (bricks/wafers)
Background/Bias light
Reflection measurement (MDP)
LBIC
BiasMDP
LBIC for solar cells
LBIC, BiasMDP measurement stage with contacts
Reference wafer
Resistivity calibration set (bricks/wafers)
Internal iron mapping of Si
P/N detection
Bar code reader
Wide range of lasers
HR-SPS with a variable energy excitation source
HR-SPS with fixed energy excitation sources
MDpicts
MDPlinescan
MDPmap