For production and quality control of monocrystalline Si ingots, bricks and wafers.
Si for HJT, HIT, TOPcon, bifacial PERC, PERC+ solar cells, Perovskites and more.
Range of lifetimes20 ns to 100 ms (for samples > 0.3 Ohm cm)
SEMI standardPV9-1110
Measurement speed< 30 sec for linescan< 5 min for complete mapping
Simultaneous measurement oflifetime μPCD/MDP (QSS) and resistivity
Automatic geometric recognitionG12, M10 bricks and wafers
Slip Lines in CZ-SI ingot
Lifetime measurement of a quasi-mono Si ingot with a lot defects
Lifetime & Resistivity Mapping
Crystal Growth Monitoring (i. e. Slip lines)
Contamination Monitoring
Oxygen Striations/OSF Ring
Iron Mapping for p-doped Si
Light Beam Induced Current (LBIC)
Sheet Resistance for Emitter Layer
and more...
User-friendly and advanced operating software with:
Export and import functions
User structure with operator
Overview over all performed measurements
Sample parameter input
Single point measurementse. g. injection dependent measurements
Mapping
Recipes
Package of analysis functions
View of line scans and single transients
Spot size variation
Resistivity measurement (bricks/wafers)
Background/Bias light
Reflection measurement (MDP)
LBIC
Internal iron mapping of p-doped Si
P/N detection
Bar code reader
Automatic geometric recognition
Wide range of lasers
Remote accessibility IP based system allows remote operation and technical support from anywhere in the world
Line scan of mc-Si wafer
Lifetime measurements of HJT wafers
HR-SPS with a variable energy excitation source
HR-SPS with fixed energy excitation sources
MDpicts
MDPlinescan
MDPmap