RESmap

Make Non-Contact Measurements of Low Resistivity Boules and Wafers with Unparalleled Repeatability

[Ge | Si | SiC | InP | GaAs | GaN | InAs and more]

Features

Contact free measurement and imaging of the resistivity
High frequency eddy current sensing principle with integrated IR temperature sensor to correct for temperature variations of the sample

Signal sensitivity
High signal sensitivity, based on the coil frequency readout (patent pending), for accurate and reliable resistivity measurements with high reproducibility and repeatability

Measurement time
< 3s for the measurement and < 1s between measurements

Measurement speed
< 30s for a 200 mm wafer/ingot, 9 points

Multi points measurement and mapping display
with maximum 9999 points

Material form factor
Flat or slightly curved wafers, boules, ingots slabs, blanks and thin films

X-Y placement resolution ≥ 0.1 mm

Edge exclusion 5 mm

Reliability
modular, compact bench top instrument design for high reliability and uptime > 99%

Repeatability of resistivity measurement
≤ 0.15%, based on Material System Analysis (MSA) using ANOVA Gage R&R methods

Measurement principle of eddy current senor

Bull's eye chart management for maximum accuracy and precision

User-friendly and advanced operating software with

Resistivity measurement recipes
Export/import functions and raw data access
Multi-level user account management
Overview over all performed measurements
Mapping options (line, cross, star, full map, topography, user defined pattern)

Package of analysis functions; statistics, variance analysis, temperature correction functions and library
Remote accessibility: Internet based system allows remote operation and technical support from anywhere in the world

Further technical specifications and configuration options

Prepared for Automation	different platforms available
Measurement method conforms	with SEMI MF673
Data and data validity checked	using NIST standards
Accuracy over calibration	interval ±1%
Integrated IR temperature sensor (±0.1°)	to allow reporting resistivity at a standard temperature, different from the actual temperature of the sample
Sample thickness correction	for samples where the penetration depth of the high frequency signal is larger than the penetration depth
Power requirements	100-250 VAC, 5 A
Dimensions (w/h/d)	465 x 550 x 600 mm
Software control	standard PC with Window 10 or latest, 2 Ethernet ports

Application examples

4H-SiC wafer resistivity variation measurement across the growth facet area

Si wafer resistivity variation measurement - mapping, distribution, and line scans